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Current Controlled Photoelectrochemical Etching of Gan Leaving Smooth Surfaces

Published online by Cambridge University Press:  10 February 2011

T. Rotter ,
D. Uffmann ,
J. Ackermann ,
J. Aderhold ,
J. Stemmer  and
J. Graul
T. Rotter
Affiliation:
Laboratorium für Informationstechnologie, Universität Hannover, Schneiderberg 32, 30167 Hannover, Germany
D. Uffmann
Affiliation:
Laboratorium für Informationstechnologie, Universität Hannover, Schneiderberg 32, 30167 Hannover, Germany
J. Ackermann
Affiliation:
Laboratorium für Informationstechnologie, Universität Hannover, Schneiderberg 32, 30167 Hannover, Germany
J. Aderhold
Affiliation:
Laboratorium für Informationstechnologie, Universität Hannover, Schneiderberg 32, 30167 Hannover, Germany
J. Stemmer
Affiliation:
Laboratorium für Informationstechnologie, Universität Hannover, Schneiderberg 32, 30167 Hannover, Germany
J. Graul
Affiliation:
Laboratorium für Informationstechnologie, Universität Hannover, Schneiderberg 32, 30167 Hannover, Germany
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Abstract

We have etched GaN grown by plasma source MBE in aqueous solutions of KOH in an electrochemical cell under HeCd laser illumination and additional current control.The etch rate was dramatically enhanced up to 8 μm/h by an applied current density of 6.4 mAcm-2. Photocurrent control leads to etched GaN surfaces exhibiting mirror-like appearance with uniform interference color. According to mechanical profilometry, they have a roughness of less than 3.5 nm after etching of several hundred nanometers, which is comparable to the roughness prior to etching. This etching process allows in situ control via photocurrent and induced yellow luminescence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 1003
Copyright
Copyright © Materials Research Society 1998

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References

1. Shul, R. J., McClellan, G.B., Casalnuovo, S.A., Rieger, D.J., Pearton, S.J., Constantine, C., Barratt, C., Karlicek, R.F., Tran, C., Schurman, M., “Inductively coupled plasma etching of GaN”, Appl. Phys. Lett. 69 (8), 1119–1121 (1996).10.1063/1.117077Google Scholar
2. Vartuli, C.B., Pearton, S.J., Lee, J.W., Hong, J., MacKenzie, J.D., Abernathy, C.R., Shul, R.J., “ICI/Ar electron cyclotron resonance plasma etching of III-V nitrides”, Appl. Phys. Lett. 69 (10), 1426–1428 (1996).Google Scholar
3. Mileham, J.R., Pearton, S.J., Abernathy, C.R., MacKenzie, J.D., Shul, R.J., Kilcoyne, S.P., “Patterning of AIN, InN, and GaN in KOH-based solutions”, J. Vac. Sci. Technol. A 14 (3), 836–839 (1996).10.1116/1.580399Google Scholar
4. Minsky, S., White, M., Hu, E. L., “Room-temperature photoenhanced wet etching of GaN”, Appl. Phys. Lett. 68 (11), 1531–1533 (1996).10.1063/1.115689Google Scholar
5. Youtsey, C., Adesida, I., Bulman, G., “Highly anisotropic photoenhanced wet etching of n-type GaN”, Appl. Phys. Lett. 71 (15), 2151–2153 (1997).10.1063/1.119365Google Scholar
6. Pelzmann, A., Mayer, M., Kirchner, C., Sowada, D., Rotter, T., Kamp, M., Ebeling, K.J., Christiansen, S., Albrecht, M., Strunk, H.P., Holländer, B., Mantl, S., “Determination of the dislocation densities in GaN on c-oriented sapphire”, MRS Internet J. Nitride Semicond.Res. 1,40 (1996).10.1557/S109257830000212XGoogle Scholar