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Crystal structure and physical properties of GaSe single crystals annealed in sulfur atmosphere

Published online by Cambridge University Press:  01 February 2011

Olga V. Voevodina ,
Aleksandr N. Morozov ,
Sergey Yu. Sarkisov ,
Yuri M. Andreev ,
Nils C. Fernelius  and
Jonathan T. Goldstein
Olga V. Voevodina
Affiliation:
[email protected], Tomsk State University, Siberian Physico-Technical Institute, Russian Federation
Aleksandr N. Morozov
Affiliation:
[email protected], Tomsk State University, Siberian Physico-Technical Institute, Russian Federation
Sergey Yu. Sarkisov
Affiliation:
[email protected], Tomsk State University, Siberian Physico-Technical Institute, Russian Federation
Yuri M. Andreev
Affiliation:
[email protected], Siberian Branch-Russian Academy of Sciences, Inst. of Monitoring of Climatic & Ecological Systems, Russian Federation
Nils C. Fernelius
Affiliation:
[email protected], Materials & Manufacturing Directorate, Air Force Research Laboratory, United States
Jonathan T. Goldstein
Affiliation:
[email protected], Materials & Manufacturing Directorate, Air Force Research Laboratory, United States
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Abstract

In spite of the progress in GaSe growing technology (high-quality crystals grown by the latest technology are characterized by low values of optical losses with the absorption coefficient values lying below 0.1 cm−1) the work continues on improving crystal properties for nonlinear optical applications. This paper presents the results of investigations on the influence of annealing in a sulfur atmosphere and in a vacuum on the properties GaSe single crystals, grown by the Bridgman method from the melt. The objective of this work was to study the possibility of intercalating GaSe with sulfur from the gas phase, and to compare the influence of doping with sulfur from melt and vapor phase on the structure and properties of GaSe crystals. Three series of annealing experiments have been conducted at temperatures 773, 923, 1073 K and the samples obtained have been studied by Hall effect, photoconductivity, optical absorption, microhardness measurements and X ray diffractometry. The results obtained are explained by assuming the intercalating of sulfur to the interlayer space and substitution of Se with S.

Keywords

crystalelectrical propertiesphotoconductivity
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE03-25
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Shi, W., Ding, Y.J., Fernelius, N., Vodopyanov, K., Optics Lett., 27 (16), 1454–1456 (2002).Google Scholar
2. Suhre, D. R., Singh, N.B., Balakrishna, V., Fernelius, N.C., Hopkins, F.K., Optics Lett., 22 (11), 775– 777 (1997).Google Scholar
3. Voevodin, V. G., Voevodina, O.G., Bereznaya, S.A., Korotchenko, Z.V., Sarkisov, S.Y., Fernelius, N.C., Goldstein, J.T., Opt. Mat., 26 (4), 495–499 (2004).Google Scholar
4. Voevodin, V. G., Bereznaya, S.A., Korotchenko, Z.V., Morozov, A.N., Sarkisov, S.Y., Fernelius, N.C., Goldstein, J.T., in Progress in Compound Semiconductor Materials IV- Electronic and Optoelectronic Applications, edited by Brown, G.J., Biefeld, R.M., Gmachl, C., Manasreh, M.O., Unterrainer, K. (Mater. Res. Soc. Symp. Proc. 829, Pittsburgh, PA, 2005) pp. 375–382.Google Scholar
5. Glushko, V.P., ed., Thermodynamic constants of materials, Handook V (Academy of Sciences USSR, Moscow, 1971)Google Scholar
6. Physical-chemical properties of semiconductor materials, Handbook (”Science”, Moscow, 1979)Google Scholar
7. Balitskyii, A.I., Krochuk, A.S., Stakhira, I.M., Franiv, A.V., Fiz. Tverd. Tela, 24 (1), 76–80 (1982) [Sov. Phys.- Solid State 24 (1) 42–44 (1982).Google Scholar
8. Schmid, Ph., Voitchovsky, J.P., Phys. Stat. Sol. (b), 65, 249–254 (1974).Google Scholar
9. Sheinkman, M. K., Shik., A. Yu., Fiz. Tekh. Poluprovodn., 10 (2), 209–233 (1976). [Sov. Phys.-Semiconductors 10 (2) 128–143 (1976)].Google Scholar
10. Shigetomi, S., Ikari, T., J. Appl. Phys., 94 (8), 5399–5401 (2003).Google Scholar