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Cross-Sectional TEM Investigation of Low-Temperature Epitaxial Silicon Films Grown by Ultra-Low Pressure CVD
Published online by Cambridge University Press: 28 February 2011
Abstract
In this paper, cross-sectional TEM is used to investigate the quality of silicon epitaxial films grown by ultra-low pressure chemical vapor deposition at 750°C. The dislocation density and epi.- substrate interface width were investigated for different predeposition Argon sputter cleaning condltions. Epitaxial films with dislocation densities of less than 10 cm−2 and interfacial width of about 13 Å were obtained.
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- Copyright © Materials Research Society 1987
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