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Control of Nucleation to Realize High Density Si Nanoparticles on SiO2 Thin Films

Published online by Cambridge University Press:  17 March 2011

Jian-hong Zhu ,
W. Thomas Leach  and
John G. Ekerdt
Jian-hong Zhu
Affiliation:
Department of Chemical Engineering, The University of Texas at Austin, Austin, TX 78712, U.S.A.
W. Thomas Leach
Affiliation:
Department of Chemical Engineering, The University of Texas at Austin, Austin, TX 78712, U.S.A.
John G. Ekerdt
Affiliation:
Department of Chemical Engineering, The University of Texas at Austin, Austin, TX 78712, U.S.A.
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Abstract

A non-thermal method to facilitate nucleation for subsequent thermal chemical vapor deposition of Si nanoparticles on SiO2/Si(001) with high density and uniform size is demonstrated. Submonolayers of Si adatoms are predeposited on SiO2/Si(001) substrates by hot-wire chemical vapor deposition with disilane in an UHV chamber. The nanoparticles are grown with a disilane pressure of 1×10-4 Torr at 550 °C. The Si nanoparticles density is increased and size distribution is narrowed by predeposition of Si adatoms when compared to thermal growth on bare SiO2/Si(001). The nanoparticles density can be controlled by the amount of Si adatom predeposition. 1.2×1012 cm-2 density and 5.5 nm size are demonstrated on SiO2/Si(001) under UHV-CVD conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 704: Symposium W – Nanoparticulate Materials , 2001 , W10.10.1
Copyright
Copyright © Materials Research Society 2002

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