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A Comparison of the Wurtzite and Zincblende Band Structures for SiC, AlN and GaN

Published online by Cambridge University Press:  25 February 2011

W. R. L. Lambrecht  and
B. Segall
W. R. L. Lambrecht
Affiliation:
Department; of Physics, Case Western Reserve University, Cleveland, OH 44106–7079
B. Segall
Affiliation:
Department; of Physics, Case Western Reserve University, Cleveland, OH 44106–7079
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Abstract

Total energy and band structure results of linear-muffin-tin orbital calculations within the atoiuic-spliere-approxiiuation are presented for SiC, GaN and A1N in the zincblende and the wurtzite structure. We discuss the origin of the directness or indirectness and the relative magnitudes of the band gaps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 367
Copyright
Copyright © Materials Research Society 1992

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References

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