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Comparison of the Properties of Sputtered and Glow Discharge a-Ge:H Films

Published online by Cambridge University Press:  25 February 2011

A. E. Wetsel ,
S. J. Jones ,
W. A. Turner ,
D. Pang ,
W. Paul ,
I. El Zawawi ,
Y. Bouizem ,
L. Chahed ,
M. L. Theye  and
F. C. Marques
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A. E. Wetsel
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
S. J. Jones
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
W. A. Turner
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
D. Pang
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
W. Paul
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
I. El Zawawi
Affiliation:
Laboratoire d’Optique des Solides, Université P. et M. Curie, Paris, France
Y. Bouizem
Affiliation:
Laboratoire d’Optique des Solides, Université P. et M. Curie, Paris, France
L. Chahed
Affiliation:
Laboratoire d’Optique des Solides, Université P. et M. Curie, Paris, France
M. L. Theye
Affiliation:
Laboratoire d’Optique des Solides, Université P. et M. Curie, Paris, France
F. C. Marques
Affiliation:
Instituto de Física, Universidade Estadual de Campinas, Campinas, Brazil
I. Chambouleyron
Affiliation:
Instituto de Física, Universidade Estadual de Campinas, Campinas, Brazil
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Abstract

Undoped a-Ge:H films have been made both by sputtering and by glow discharge under various combinations of deposition parameters, and characterized structurally, electrically, and optically. A detailed comparison of subband gap spectra of sputtered and glow discharge samples has been carried out using photothermal deflection spectroscopy and the constant photocurrent method. The results show subband gap absorption in a-Ge:H to be an order of magnitude larger than in device-quality a-Si:H. For some of the films the absorption spectra deduced from transmission and PDS fit very well onto the absorption spectra inferred from CPM measurements, while for others it is clear that the match is very poor. We infer that the photoconductivity-derived spectrum does not necessarily reflect the dominant absorption process, and that this is related to the existence of a two-phase structure clearly observed by transmission and scanning electron microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 547
Copyright
Copyright © Materials Research Society 1990

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References

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