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Comparative Study of Experimental Techniques for Boron Profiling at Poly-Si/SiO2 Interface

Published online by Cambridge University Press:  26 February 2011

M. Furtsch ,
J. Bevk ,
J. Bude ,
S. W. Downey ,
K. S. Krisch ,
N. Moriya ,
P. J. Silverman  and
H. S. Luftman
M. Furtsch
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. Bevk
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. Bude
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
S. W. Downey
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
K. S. Krisch
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
N. Moriya
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
P. J. Silverman
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
H. S. Luftman
Affiliation:
AT&T Bell Laboratories, Breinigsville, PA 18031
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Abstract

Electrical characterization of MOS structures and device modeling require accurate information about dopant concentration, particularly at the poly-Si/SiO2 interface. We compare four experimental techniques (secondary ion mass spectrometry SIMS, resonant ion mass spectrometry RIMS, differential Hall effect profiling, and spreading resistance analysis) to measure boron and free carrier concentrations in poly-Si, SiO2 and crystalline Si. We find that no single technique completely characterizes the entire MOS structure, and that spreading resistance analysis in particular substantially underestimates the free carrier concentration at the poly-Si/SiO2 interface. We conclude that in most cases of technological interest the magnitude of the poly depletion effect scales with the average carrier concentration at some distance away from the interface and that the interfacial effects, such as dopant segregation, are of only secondary importance. These findings are supported by theoretical modeling of capacitance-voltage behavior of boron-doped MOS capacitors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 857
Copyright
Copyright © Materials Research Society 1995

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References

1. Lin, W. W., IEEE Electron Device Lett. 15, 51 (1994).Google Scholar
2. Downey, S. W., Emerson, A. B., Georgiou, G. E., Bevk, J., Kistler, R. C., Moriya, N., Jacob-son, D. C. and Wise, M. L., J. Vac. Sci. Technol. B13, 167 (1995).Google Scholar
3. Solecon Labs, Inc., San Jose, CA, USA.Google Scholar
4. Bio-Rad, Mountain View, CA, USA.Google Scholar
5. Bevk, J. et al., to be published in the Journal of Electronic Materials. Google Scholar
6. Krisch, K. S., Bude, J. and Manchanda, L., Proceedings of the Symposium on Diagnostic Techniques for Semiconductor Materials and Devices (Electrochemical Society), 12 (1994).Google Scholar