Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-28T16:48:43.900Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Surface Preparation Methods Using A Novel Scanning Kelvin Probe

Published online by Cambridge University Press:  21 February 2011

Iain D. Baikie  and
Gerrit H. Bruggink
Iain D. Baikie
Affiliation:
Department of Applied Physics, The Robert Gordon University, St. Andrew's Street, Aberdeen ABI 1HG, Scotland
Gerrit H. Bruggink
Affiliation:
Department of Applied Physics, The Robert Gordon University, St. Andrew's Street, Aberdeen ABI 1HG, Scotland
Get access

Abstract

Using a novel microscopic Scanning Kelvin Probe (SKP), featuring Array Head Detector, work function topographies of metal, semiconductor and metal/semiconductor surfaces have been investigated.

The work function is an extremely important indicator of surface and interface condition and has been utilized to study preparation methods, surface roughness, stress defects and contamination, both in UHV and air environments.

Extension of the basic technique, via illumination of the surface under the probe, permits determination of the local density of states (LDOS). Variation in LDOS, due to both monochromatic and white light, can be used to study surface metal contamination, oxide thickness and bulk contamination.

The Kelvin method utilizes a non-contact, non-destructive, measurement mode. It produces work function and height topographies of both flat and rough metallic and semiconducting specimens in air, UHV and liquid environments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 423
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Thomson, W., later Lord Kelvin, Phil. Mag. 46, 82 (1898).Google Scholar
2. Zisman, W.A., Rev. Scd. Instrum. 3, 267 (1932).Google Scholar
3. Meyer, J.A., Baikie, I.D., Lopinski, G.P., Prybyla, J.A. and Estrup, P.J, J. Vac. Scl. Technol. A8, 2468 (1990).Google Scholar
4. Baikie, I.D., Ph.D. Thesis, University of Twente, 1988.Google Scholar
5. Kinlock, C.D. and McMullen, A.I., J. Sci. Instrum. 36, 347 (1959).Google Scholar
6. Grahm, L. and Hertz, C.H., Physiologia Plantarum 15, 96 (1962).Google Scholar
7. Balkie, I.D. In Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing, edited by Nemanich, R.J, Helms, C.R., Hirose, M and Rubloff, G.W. (Mater. Res. Soc. Proc. 259, Pittsburgh, PA 1992), pp. 149–153.Google Scholar
8. Bruggink, G. H. and Baikie, I.D., Proc. Residual Stress Conf., University of Twente (1991).Google Scholar
9. Baikie, I.D. in Chemical Perspectives of Microelectronic Materials, edited by Interrante, L.V., Jensen, K.F., Dubois, L.H. and Gross, M.E. (Mater. Res. Soc. Proc. 204, Pittsburgh, PA 1991) pp. 363–368.Google Scholar
10. Baikie, I.D. and Venderbosch, E. in Photo-Induced Space Charge Effects in Semiconductors, edited by Nolte, D.D, Haegel, N.M. and Goosen, K.W. (Mater. Res. Soc. Proc. 261, Pittsburgh, PA, 1992) pp. 149–154.Google Scholar
11. Baikie, I.D., Mackenzie, S., P.J.Z. Estrup and Meyer, J.A., Rev. Sci. Instrum. 62, 1326 (1991).CrossRefGoogle Scholar
12. Baikie, I.D., Werf, K.O. van der, Oerbekke, H., Broeze, J. and Silfhout, A. van, Rev. Sci. Instrum. 60, 930 (1989).Google Scholar
13. Balkie, I.D., Venderbosch, E., Meyer, J.A. and Estrup, P.J.Z., Rev. Sci. Instrum. 62, 725 (1991).Google Scholar