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Characterization of Photovoltaic Cells Using n-InN/p-Si Grown by RF-MBE

Published online by Cambridge University Press:  01 February 2011

Chiharu Morioka ,
Tomohiro Yamaguchi ,
Hiroyuki Naoi ,
Tsutomu Araki ,
Akira Suzuki  and
Yasushi Nanishi
Chiharu Morioka
Affiliation:
Dept. of Photonics, Ritsumeikan Univ., 1–1xy11 Noji-Higashi, Kusatsu, Shiga 525–8577, Japan
Tomohiro Yamaguchi
Affiliation:
Dept. of Photonics, Ritsumeikan Univ., 1–1xy11 Noji-Higashi, Kusatsu, Shiga 525–8577, Japan
Hiroyuki Naoi
Affiliation:
Center for Promotion of The 21st Century COE Program, Ritsumeikan Univ., 1–1–1 Noji-Higashi, Kusatsu, Shiga 525–8577, Japan
Tsutomu Araki
Affiliation:
Dept. of Photonics, Ritsumeikan Univ., 1–1xy11 Noji-Higashi, Kusatsu, Shiga 525–8577, Japan
Akira Suzuki
Affiliation:
Res. Org. of Sci. & Eng., Ritsumeikan Univ., 1–1–1 Noji-Higashi, Kusatsu, Shiga 525–8577, Japan
Yasushi Nanishi
Affiliation:
Dept. of Photonics, Ritsumeikan Univ., 1–1xy11 Noji-Higashi, Kusatsu, Shiga 525–8577, Japan
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Abstract

A newly reported narrow bandgap for indium nitride means that the indium gallium nitride system of alloys can be a candidate for new high efficiency solar cells covering most of the solar spectrum. In this paper, n-InN films were grown on p-Si (100) substrates. We characterize, for the first time, photovoltaic properties using n-InN/p-Si hetero-junction grown by RF-MBE.

Type
articles
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y10.71
Copyright
Copyright © Materials Research Society 2004

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References

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