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Characterization of Excimer Laser Deposited Gaas Films From the Photolysis of Trimethylgallium and Trimethylarsine At 193 nm

Published online by Cambridge University Press:  28 February 2011

V. R. Mccrary ,
V. M. Donnelly ,
D. Brasen ,
A. Appelbaum  and
R. C. Farrow
V. R. Mccrary
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
V. M. Donnelly
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
D. Brasen
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
A. Appelbaum
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
R. C. Farrow
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

The growth of GaAs thin films from the excimer laser photolysis of trimethylarsine (TMAs) and trimethylgallium (TMGa) at 193 nm is reported. Scanning electron microscopy (SEM), electron channeling, Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (TEM), and Auger electron spectroscopy (AES) were used to characterize the films. Incident laser fluences on the surface of 0.096–0.115 J/cm2 lead to carbon desorption, adatom mobility, transient annealing and hence epitaxial growth. However, TEM micrographs also revealed the growth of GaAs twins along the <110> direction in a novel periodic fashion, with a spacing equal to that of the ArF excimer laser wavelength (193 nm). Time-resolved mass spectrometry, used to determine gas-phase photolysis products created during the deposition process, showed that AsCH3 and higher gallium-alkyls are significant products which transport As and Ga to the surface.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 223
Copyright
Copyright © Materials Research Society 1987

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References

1. Donnelly, V. M., McCrary, V. R., Appelbaum, A., Brasen, D., and Lowe, W. P., J. Appl. Phys. 61, 1410 (1987).Google Scholar
2. Donnelly, V. M., Brasen, D., Appelbaum, A., and Geva, M., J. Appl. Phys. 58, 2022 (1985).Google Scholar
3. McCrary, V. R. and Donnelly, V. M., submitted to J. Crystal Growth, 1987.Google Scholar
4. Lyden, H. A., Phys. Rev. A 134, 1106 (1964).Google Scholar
5. Sugawara, K., Yoshimi, T., Okuyama, H., and Shirasu, T., J. Electrochem. Soc. 121, 1233 (1974).Google Scholar
6. Grange, J. O., in The Technology and Physics of Molecular Beam Epitaxy, edited by Parker, E. H. C. (Plenum, New York, 1985), p. 54.Google Scholar
7. Joy, D. C., Newbury, D. E., and Davidson, D. L., J. Appl. Phys. 153, R81 (1982).Google Scholar
8. Joy, D. C. and Farrow, R. C., Proc. 41st Ann. Mtg. Electron Microscopy Soc. (Claiters, Baton Rouge, 1983).Google Scholar
9. Shulson, E. M., Phys. Stat. Solidi B 46, 95 (1971).Google Scholar
10. Oron, N. and Sorenson, G., Appl. Phys. Lett. 35, 782 (1979).Google Scholar
11. Isenor, N. R., Appl. Phys. Lett. 31, 148 (1977).Google Scholar
12. Ehrlich, D. J. and Brueck, S. R. J., Appl. Phys. Lett. 47, 216 (1985).Google Scholar
13. Young, J. F., Sipe, J. E., Preston, J. S., and van Driel, H. M., Appl. Phys. Lett. 41, 261 (1982).Google Scholar
14. van Driel, H. M., Sipe, J. E., and Young, J. F., Phys. Rev. Lett. 49, 1955 (1982).Google Scholar
15. Leamy, H. J., Rozgonyi, G. A., Sheng, T. T., and Cellar, G. K., Appl. Phys. Lett., 32, 535 (1978).Google Scholar
16. Emmony, D. C., Howson, R. P., and Willis, L. J., Appl. Phys. Lett. 23, 598 (1973).Google Scholar
17. Heyen, M. and Balk, P., J. Crystal Growth 53, 558 (1981), and references therein.Google Scholar
18. Ibbotson, D. E., Flamm, D. L., and Donnelly, V. M., J. Appl. Phys. 54, 5974 (1983).Google Scholar
19. Stenhagen, E., Abrahamsson, S., and McLafferty, F. W., in Registry of Mass Spectral Data, Vol. 1, (John Wiley & Sons, New York).Google Scholar
20. O'Brien, S.C., Liu, Y., Zhang, Q., Heath, J. R., Tittel, F. K., Curl, R. F., and Smalley, R. E., J. Chem. Phys. 84, 4074 (1986).Google Scholar