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Changing PL Intensity from GaAs/Al0.3Ga0.7As Heterostructures due to the Chemisorption of SO2: Effects of Heterostructure Geometry

Published online by Cambridge University Press:  21 February 2011

J.F. Geisz ,
T.F. Kuech  and
A.B. Ellis
J.F. Geisz
Affiliation:
Department of Chemical Engineering,
T.F. Kuech
Affiliation:
Department of Chemical Engineering,
A.B. Ellis
Affiliation:
Department of Chemistry, University of Wisconsin, Madison, WI 53706
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Abstract

Chemical adsorption of gases onto semiconductor surfaces results in a change in the density of electronic surface states. The corresponding change in the number of surface charges gives rise to a measurable change in the bulk charge distribution within the semiconductor. This phenomenon forms the basis of a novel solid-state chemical sensor device using the intensity of photoluminescence (PL) as a measurement technique. We have observed changes in the PL intensity from MOVPE-grown GaAs/Al0 3Ga0 7As heterostructures due to the chemisorption of SO2 onto “photowashed” GaAs surfaces. The photowashing technique is believed to reduce the density of preexisting surface states by removing As from the GaAs surface oxide. The PL signal-to-noise ratio and PL sensitivity characteristics of these chemical sensors may be dramatically improved by varying semiconductor structure. We have observed a range of PL enhancements upon exposure to 0.6% SO2 in flowing N2 from heterostructure layers with various thicknesses and doping densities. These results are explained by comparison with a FEM numerical model derived to correlate the relative PL intensity from various heterostructures to the surface charge density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 225
Copyright
Copyright © Materials Research Society 1994

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References

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