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Carrier Transport Mechanisms in Metal-Insulator–Metal Au/Ba0.8Sr0.2TiO3/ ZrO2/ Ba0.8Sr0.2TiO3/Pt Thin Film Heterostructures

Published online by Cambridge University Press:  10 April 2013

Santosh K. Sahoo ,
H. Bakhru ,
Sumit Kumar ,
D. Misra ,
Colin A. Wolden ,
Y. N. Mohapatra  and
D. C. Agrawal
Santosh K. Sahoo
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, USA New Jersey Institute of Technology, Newark, NJ 07102, USA
H. Bakhru
Affiliation:
College of Nanoscale Science and Engineering, SUNY Albany, NY 12222, USA
Sumit Kumar
Affiliation:
Intel Corporation, 5000 W Chandler Blvd., Chandler, AZ 85226, USA
D. Misra
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102, USA
Colin A. Wolden
Affiliation:
Chemical and Biological Engineering, Colorado School of Mines, Golden, CO 80401, USA
Y. N. Mohapatra
Affiliation:
Materials Science Programme, Indian Institute of Technology, Kanpur 208016, India
D. C. Agrawal
Affiliation:
Materials Science Programme, Indian Institute of Technology, Kanpur 208016, India
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Abstract

Ba0.8Sr0.2TiO3/ZrO2 heterostructured thin films are deposited on Pt/Ti/SiO2/Si substrates by a sol-gel process. The current versus voltage (I-V) measurements of metal-insulator-metal (MIM) devices using the above multilayered thin film as the dielectric have been taken in the temperature range of 310 to 410K. The electrical conduction mechanisms contributing to the leakage current at different field regions have been studied in this work. Various models are used to know the different leakage mechanisms contributing to the conduction current in these devices. It is observed that Poole-Frenkel mechanism is the dominant conduction process in the high field region with a deep trap level energy (φt) of 1.31 eV whereas space charge limited current (SCLC) mechanism and Ohmic conduction process are contributing to the leakage current in the medium and low field regions respectively. The estimated shallow trap level (Et) for SCLC mechanism is 0.26 eV whereas the activation energy (Ea) for the electrons in the Ohmic conduction process is about 0.07 eV. An energy band diagram is given to explain the various leakage mechanisms in different field regions for these heterostructured thin films.

Keywords

electrical propertiessol-gelthin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1507: Symposium AA – Oxide Nanoelectronics and Multifunctional Dielectrics , 2013 , mrsf12-1507-aa12-16
Copyright
Copyright © Materials Research Society 2013

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