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Bismuth-Induced Layer-by-Layer Growth in the Homoepitaxial Growth of Fe(100)

Published online by Cambridge University Press:  11 February 2011

Masao Kamiko
Affiliation:
Institute of Industrial Science, University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo, 153–8505, JAPAN.
Hiroaki Chihaya
Affiliation:
Institute of Industrial Science, University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo, 153–8505, JAPAN.
Hiroyuki Mizuno
Affiliation:
Institute of Industrial Science, University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo, 153–8505, JAPAN.
Junhua Xu
Affiliation:
National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 5, Higashi 1–1, Tsukuba, Ibaraki 305–8565, JAPAN
Isao Kojima
Affiliation:
National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 5, Higashi 1–1, Tsukuba, Ibaraki 305–8565, JAPAN
Ryoichi Yamamoto
Affiliation:
Institute of Industrial Science, University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo, 153–8505, JAPAN.
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Abstract

We have investigated the effect of Bi on the homoepitaxial growth of Fe(100) by means of reflection high-energy electron diffraction (RHEED). It was clearly found that Bi induces layer-by-layer growth of Fe on Fe(100)-c(2×2)O reconstruction surface. The result of the dependence of the growth behavior as a function of Bi layer thickness suggests that there is optimum amount of Bi surfactant layer that induces the smoother layer-by-layer growth. A strong surface segregation of Bi was found at the top of surface and acts as a surfactant by promoting the interlayer transport.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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