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Application of Ion-Plasma-Electron Technological Source T A M E K for Modification of Materials

Published online by Cambridge University Press:  22 February 2011

Alexander M. Tolopa
Alexander M. Tolopa*
Affiliation:
Applied Physics Institute, P.O.Box 561, Sumy, 244024, Ukraine. Pan TAMEK, 13 Partizansky prospect, Vladivostok, 690002, Russia. TAMEK High Tech. Inc., 1111 Third Avenue, Suite 3400, Seattle, WA, 98101, USA.
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Abstract

The same vacuum arc TAMEK source in pulse mode can generate a wide aperture S=300...2000 cm^2 ion flow of any hard electroconductive materials (metal or composites type -Tic, TiSiC, NiCrAlY, MoS, TiMoSi, WA1B, TІBNІ) both for ion implantation (Ei<200 keV, dDi=10^16 ion/cm^2/min) and for deposition dh=50...200 nm/min of the same ions. TAMEK design principle is to provide realization of ion implantation, deposition, mixing or ion beam assisted deposition of the same ions without switching off the source. TAMEK is able to create a mutual mixed (10×90 at.%) alloyed layer up to 3 μm for time in t=15 min, with structure improving (microhardness) of inner layer up to 50 μm in depth. This report presents a review of application of TAMEK source for improving the properties of surface layers of tools, construction materials, electrical contacts and electrodes, glass and other dielectric materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 1059
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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