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Analysis of strain in sub-grains with variable misorientation in GaN epilayers by digital processing of HRTEM images

Published online by Cambridge University Press:  17 March 2011

S. Kret ,
P. Ruterana ,
J. Chen  and
G. Nouet
S. Kret
Affiliation:
Permanent address: Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland.
P. Ruterana
Affiliation:
ESCTM-CRISMAT UMR 6508 CNRS-ISMRA, 6 Boulevard du Marãchal Juin, 14050 CAEN Cedex, France.CAEN Cedex, France.
J. Chen
Affiliation:
ESCTM-CRISMAT UMR 6508 CNRS-ISMRA, 6 Boulevard du Marãchal Juin, 14050 CAEN Cedex, France.CAEN Cedex, France.
G. Nouet
Affiliation:
ESCTM-CRISMAT UMR 6508 CNRS-ISMRA, 6 Boulevard du Marãchal Juin, 14050 CAEN Cedex, France.CAEN Cedex, France.
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Abstract

In epitaxial GaN layers on (0001) sapphire, the distance between edge dislocations in sub-grain boundaries is variable. The strain state in such sub-grains is quantitatively measured by processing of HRTEM images. The dislocation core distribution maps and in plane Burgers vectors components are derived from experimental strain tensor by applying the continuum dislocation theorem. For image simulationsthe atomic models of edge dislocations are calculated using a modified Stillinger-Weber potential. It is shown that the strain field extracted from simulated images matches that from experimental ones. The corresponding dislocation density peaks are larger and more splitted than those from simulated images.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G11.54
Copyright
Copyright © Materials Research Society 2001

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References

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