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Analysis and Calibration of the Flow Characteristics of A Pressure Controlled Vapor Source For Gas Source Doping: CdTe:l

Published online by Cambridge University Press:  16 February 2011

D. Rajavel ,
B. K. Wagner ,
K. Maruyama ,
R. G. Benz ,
A. Conte  and
C. J. Summers
D. Rajavel
Affiliation:
Physical Sciences Laboratory, Georgia Tech Research Institute, Atlanta, Georgia, 30322.
B. K. Wagner
Affiliation:
Physical Sciences Laboratory, Georgia Tech Research Institute, Atlanta, Georgia, 30322.
K. Maruyama
Affiliation:
Visiting Scientist, Fujitsu, Japan
R. G. Benz
Affiliation:
Physical Sciences Laboratory, Georgia Tech Research Institute, Atlanta, Georgia, 30322.
A. Conte
Affiliation:
Physical Sciences Laboratory, Georgia Tech Research Institute, Atlanta, Georgia, 30322.
C. J. Summers
Affiliation:
Physical Sciences Laboratory, Georgia Tech Research Institute, Atlanta, Georgia, 30322.
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Abstract

A pressure controlled vapor source was developed for the gas source doping of (Hg,Cd)Te alloys. The dopant source has been subjected to extensive tests, and the flow characteristics determined. The dopant source was used to control the flow rates of ethyliodide for the n-type doping of CdTe. Highly conductive CdTe:l films were grown by molecular beam epitaxy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 275
Copyright
Copyright © Materials Research Society 1991

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References

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