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Amorphous-Silicon TFTs with Self-Aligned Poly-Silicon Source and Drain
Published online by Cambridge University Press: 01 January 1993
Abstract
A new self-aligned a-Si TFT has been proposed. The TFT has the highly conductive n+ poly-Si source and drain with self-aligned manner. The key process technique employed to this TFT is of excimer-laser selective recrystallization. Two ways have been successfully demonstrated to acheive the selectivity of recrystallization. The fabricated TFT had the field- effect mobility of 0.8cm2/Vs and high on/off current-ratio more than 107.
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- Copyright © Materials Research Society 1993
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