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AlInAs Band Gap Modulations Observed by Tem and Optical Measurements
Published online by Cambridge University Press: 10 February 2011
Abstract
At a low MBE growth temperature (400°C), an anisotropic composition modulation has been observed by Transmission Electron Microscopy (TEM) on AIlnAs layers. Optical measurements have been performed on these samples and compared with classical AllnAs grown at 530°C. We show the clustering “organization” on the low temperature layers and we propose some hypothesis to explain the composition modulation effects on the AlInAs optical properties.
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- Copyright © Materials Research Society 1996
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