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Advanced Deposition Phase Diagrams for Guiding Si:H-Based Multijunction Solar Cells

Published online by Cambridge University Press:  01 February 2011

Jason Collins ,
Nikolas J. Podraza ,
Jian Li ,
Xinmin Cao ,
Xunming Deng  and
Robert W. Collins
Jason Collins
Affiliation:
[email protected], University of Toledo, Department of Physics and Astronomy, Toledo, OH, 43606, United States
Nikolas J. Podraza
Affiliation:
[email protected], University of Toledo, Department of Physics and Astronomy, Toledo, OH, 43606, United States
Jian Li
Affiliation:
[email protected], University of Toledo, Department of Physics and Astronomy, Toledo, OH, 43606, United States
Xinmin Cao
Affiliation:
[email protected], University of Toledo, Department of Physics and Astronomy, Toledo, OH, 43606, United States
Xunming Deng
Affiliation:
[email protected], University of Toledo, Department of Physics and Astronomy, Toledo, OH, 43606, United States
Robert W. Collins
Affiliation:
[email protected], University of Toledo, Physics and Astronomy, 2801 W. Bancroft Street, Mail drop 111, Toledo, OH, 43606, United States
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Abstract

Phase diagrams have been established to describe very high frequency (vhf) plasma-enhanced chemical vapor deposition (PECVD) processes for intrinsic hydrogenated silicon (Si:H) and silicon-germanium alloy (Si1-xGex:H) thin films using crystalline Si substrates that have been over-deposited with n-type amorphous Si:H (a-Si:H). The Si:H and Si1-xGex:H processes are applied for the top and middle i-layers of triple-junction a-Si:H-based n-i-p solar cells fabricated at University of Toledo. Identical n/i cell structures were co-deposited on textured Ag/ZnO back-reflectors in order to correlate the phase diagram and the performance of single-junction solar cells, the latter completed through over-deposition of the p-layer and top contact. This study has reaffirmed that the highest efficiencies for a-Si:H and a-Si1-xGex:H solar cells are obtained when the i-layers are prepared under maximal H2 dilution conditions.

Keywords

photovoltaicplasma-enhanced CVD (PECVD) (deposition)Si
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A15-02
Copyright
Copyright © Materials Research Society 2007

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References

[1] Yang, J., Banerjee, A., and Guha, S., Appl. Phys. Lett. 70, 2975 (1997).Google Scholar
[2] Deng, X., Liao, X.B., Han, S.J., Povolny, H., and Agarwal, P., Solar Energy Mater. Solar Cells 62, 89 (2000).Google Scholar
[3] Tsu, D.V., Chao, B.S., Ovshinsky, S.R., Guha, S., and Yang, J., Appl. Phys. Lett. 71, 1317 (1997).Google Scholar
[4] Collins, R.W. and Ferlauto, A.S., Curr. Opinion Solid State Mater. Sci. 6, 425 (2002).Google Scholar
[5] An, I., Zapien, J.A., Chen, C., Ferlauto, A.S., Lawrence, A.S., and Collins, R.W., Thin Solid Films 455, 132 (2004).Google Scholar
[6] Lautenschlager, P., Garriga, M., Viña, L., and Cardona, M., Phys. Rev. B 36, 4821 (1987).Google Scholar
[7] Ferlauto, A.S., Ferreira, G.M., Pearce, J.M., Wronski, C.R., Collins, R.W., Ganguly, G., and Deng, X., J. Appl. Phys. 92, 2424 (2002).Google Scholar