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Activation Uniformity Dependence of Undoped Semi-Insulating GaAs on Post-Implant Annealing Conditions
Published online by Cambridge University Press: 26 February 2011
Abstract
In this article we will illustrate how by suitable furnace design, the radial thermal gradients generated on a GaAs substrate during the post-implant annealing cycle can be virtually eliminated, and how such a technique can result in appreciable improvement in on-wafer activation uniformity (standard deviation better than ± 2%), with virtually constant activation efficiency in going from seed to tail end wafer of a given ingot.
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- Copyright © Materials Research Society 1989