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1H Nmr in μc-Si:H Deposited With Different Plasma Excitation Frequencies and Silane Concentrations

Published online by Cambridge University Press:  10 February 2011

P. Hari ,
P. C. Taylor  and
F. Finger
P. Hari
Affiliation:
Department of Physics, University of Utah, Salt Lake City UT 84112
P. C. Taylor
Affiliation:
Department of Physics, University of Utah, Salt Lake City UT 84112
F. Finger
Affiliation:
ISI-PV, Forschungszentrum Julich, D-5170 Julich, Germany
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Abstract

Six samples of pc-Si:H were prepared by PECVD at 200°C with plasma excitation frequencies ranging from 13 MHz to 95 MHz. Four samples were prepared with gas mixtures of 3% SiH 4 in H2. For these samples the plasma excitation frequencies ranged from 13 MHz to 95 MHz. Two samples at a plasma excitation frequency of 95 MHz were prepared at 5% and 8% SiH4 in H2. All samples were deposited on aluminum foil and etched off using dilute HCI to form powdered samples. These samples were studied by nuclear magnetic resonance (NMR), electron spin resonance (ESR) and infrared (IR) absorption measurements. The broad and narrow components of the free induction decay (FID) in the NMR measurements were compared to the respective components that occur in a-Si:H. The broad components in the various samples of μc-Si:H are similar in width to the broad component in a-Si:H, but the narrow component is narrower by a factor of two as compared to the narrow components in μ-Si:H. The narrow component in pic-Si:H samples exhibits a beat pattern similar to a previously observed Pake doublet. ESR measurements performed between 20 K and 300 K show that the spin densities, which can be attributed to silicon dangling bond states, increase as a function of plasma excitation frequency. The hydrogen content of each μc-Si:H sample was estimated from the NMR measurements, and these estimates are in good arrangement with the hydrogen content estimated from IR measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 491
Copyright
Copyright © Materials Research Society 1996

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References

1. Boyce, J. B. in Hydrogen in Disordered and Amorphous Silicon, edited by Bambakidis, G. and Bowman, R.C. (NATO Study Inst. Proc., Rhodes, Greece, 1985), p. 101.Google Scholar
2. Reimer, J.A., Vaughan, R.W. and Knights, J.C., Phys. Reb. B 24, 3360 (1981).Google Scholar
3. Finger, F., Tzolvov, M., Hapke, P., Luysberg, M., Houben, L., Carius, R. and Wagner, H., 8th Annual Sunshine Workshop (Tokyo, 1995), p. 89.Google Scholar
4. Finger, F., Malten, C., Hapke, P., Carius, R., Fluckiger, R. and Wagner, H., Philo. Mag. Lett. 70, 247 (1994).Google Scholar
5. Malten, C., Finger, F., Hapke, P., Kulessa, T., Walker, C., Carious, R., Fluckiger, R. and Wagner, H., Mat. Res. Soc. Symp. 358, 757 (1995).Google Scholar
6. Boyce, J.B., Stutzmann, M. and Ready, S.E., J. Non-Cryst. Solids 77& 78, 265 (1985).Google Scholar
7. Kumeda, M., Yonezawa, Y., Morimoto, A., Ueda, S. and Shimizu, T., J. Non-Cryst. Solids 59, 779 (1983).Google Scholar
8. Hayashi, S., Yamasaki, S., Matsuda, A. and Tanaka, K., J. Non-Cryst. Solids 59, 779 (1983).Google Scholar
9. Ready, S.E., Boyce, J.B. and Tsai, C.C., Mat. Res. Soc. Symp. Proc. 118, 103 (1988).Google Scholar