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AB Initio Calculations for Defects in Silicon-Based Amorphous Semiconductors
Published online by Cambridge University Press: 21 February 2011
Abstract
We have calclulated the ESR hyperfine parameters of threefold-coordinated Si atoms and twofold-coordinated P and N atoms in Si-based amorphous semiconductors using the density functional theory with a local-spin-density approximation. These calculated results have been compared with the observed ESR results.
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- Copyright © Materials Research Society 1992