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In-line Monitoring of Grain Size Distribution of Channel Poly Si usedin 3D NAND Flash Memory Devices using Multiwavelength RamanSpectroscopy

Published online by Cambridge University Press:  18 January 2016

Noh Yeal Kwak ,
Chul Young Ham ,
Min Sung Ko ,
Sung Chul Shin ,
Seung Jin Yeom ,
Chul Woo Park ,
Chun Ho Kang ,
Byung Seok Lee ,
Sung Gi Park  and
Noh Jung Kwak
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Noh Yeal Kwak*
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Chul Young Ham
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Min Sung Ko
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Sung Chul Shin
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Seung Jin Yeom
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Chul Woo Park
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Chun Ho Kang
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Byung Seok Lee
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Sung Gi Park
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Noh Jung Kwak
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Woo Sik Yoo
Affiliation:
WaferMasters, Inc., 254 East Gish Road, San Jose, CA 95112, USA
*
*(Email: [email protected])
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Abstract

Feasibility of multiwavelength Raman spectroscopy was studied as a potentialin-line monitoring technique for grain size distribution in channel poly-Si usedin three dimensional stacked NAND (3D NAND) Flash memory devices. Variouschannel poly-Si materials in 3D-NAND Flash memory devices, converted fromchemical vapor deposition (CVD) grown a-Si, were characterized usingnon-contact, multiwavelength Raman spectroscopy and high resolutioncross-sectional transmission electron microscopy (HRXTEM). The Ramancharacterization results were compared with HRXTEM images. The correlationbetween the grain size distribution characterized by multiwavelength Ramanspectroscopy and “on current” (ION) of 3D NANDFlash memory devices was investigated. Good correlation between these techniqueswas seen. Multiwavelength Raman spectroscopy is very promising as anon-destructive in-line monitoring technique for grain size distribution inchannel poly-Si used in 3D NAND Flash memory devices.

Keywords

Raman spectroscopytransmission electron microscopy (TEM)Si
Type
Articles
Information
MRS Advances , Volume 1 , Issue 5: Electronics and Photonics , 2016 , pp. 339 - 348
Copyright
Copyright © Materials Research Society 2016 

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