The focused ion beam (FIB) tool has been successfully used as both a
stand alone analytical instrument and a means to prepare specimens for
subsequent analysis by SEM, TEM, SIMS, XPS, and AUGER. In this work,
special emphasis is given to TEM specimen preparation by the FIB
lift-out technique. The fundamental ion/solid interactions that
govern the FIB milling process are examined and discussed with respect
to the preparation of electron transparent membranes. TRIM, a Monte
Carlo simulation code, is used to physically model variables that
influence FIB sputtering behavior. The results of such computer
generated models are compared with empirical observations in a number
of materials processed with an FEI 611 FIB workstation. The roles of
incident ion attack angle, beam current, trench geometry, raster
pattern, and target-material-dependent removal rates are considered.
These interrelationships are used to explain observed phenomena and
predict expected milling behaviors, thus increasing the potential for
the FIB to be used more efficiently with reproducible results.