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Weak-Beam Thickness-Fringe Contrast Analysis of Defects in GaN Pyramids

Published online by Cambridge University Press:  02 July 2020

Zhigang Mao ,
Stuart McKeraan ,
C. Barry Carter ,
Wei Yang  and
Scott A. McPherson
Zhigang Mao
Affiliation:
Department of Chemical Engineering And Materials Science, University Of Minnesota, Mn55455-0132
Stuart McKeraan
Affiliation:
Department of Chemical Engineering And Materials Science, University Of Minnesota, Mn55455-0132
C. Barry Carter
Affiliation:
Department of Chemical Engineering And Materials Science, University Of Minnesota, Mn55455-0132
Wei Yang
Affiliation:
Honeywell Technology Center, 12001 State Hwy. 55, Plymouth, MN55441
Scott A. McPherson
Affiliation:
Honeywell Technology Center, 12001 State Hwy. 55, Plymouth, MN55441
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Extract

The possible dislocations and slip systems in the wurtzite structure are the same as in hcp structure [1]. The Burgers vectors of these dislocations are . The dislocations can lie on either the (0001) basal plane or prism planes. The dislocations lie on pyramidal planes. TEM studies have revealed that there are predominately three types of dislocations in a wurtzite GaN epilayer which has not been grown by selective overgrowth (e. g. [2, 3]). The majority of the dislocations are threading dislocations with Burgers vector which appear randomly in the epilayer, they result from the growth errors during the growth process. The other two types of dislocation are halflpops with a [0001] or Burgers vector. The [0001] dislocation half-loop lies on the prism plane and the dislocation half-loop lies on the (0001) basal plane which usually appears near the epilayer/substrate interface.

Type
Defects in Semiconductors
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 736 - 737
Copyright
Copyright © Microscopy Society of America

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References

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