Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-23T16:10:29.013Z Has data issue: false hasContentIssue false

Using 4D-STEM to Track Structural Changes Due to Electrochemical Doping in Organic Electrochemical Transistors

Published online by Cambridge University Press:  22 July 2022

Andrew A. Herzing*
Affiliation:
Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, USA
Lucas Q. Flagg
Affiliation:
Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, USA
Lee J. Richter
Affiliation:
Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, USA
Jonathan W. Onorato
Affiliation:
Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
Christine K. Luscombe
Affiliation:
Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
*
*Corresponding author: [email protected]

Abstract

Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
On Demand - Electron Microscopy of Beam Sensitive Samples: The Trials and Tribulations of Electron-Beam Sample Interactions
Copyright
Copyright © Microscopy Society of America 2022

References

Rivnay, J., et al. Nat Rev Mater 3 (2018) 17086. doi: 10.1038/natrevmats.2017.86CrossRefGoogle Scholar
Giovannitti, A., et al. Proc National Acad Sci 113 (2016) 12017. doi: 10.1073/pnas.1608780113CrossRefGoogle Scholar
Flagg, L. Q., et al. J Am Chem Soc 141 (2019) 4345. doi: 10.1021/jacs.8b12640CrossRefGoogle Scholar
Herzing, A. A., et al. Microsc Microanal 27S1 (2021) 1792. doi: 10.1017/s1431927621006553Google Scholar
Dong, B. X., et al. Chem Mater 31 (2019) 1418. doi: 10.1021/acs.chemmater.8b05257Google Scholar