The Use of Argon Cluster Ion Sources in Etching of Inorganic Materials with Reduced Chemical Damage: Toward a Better Understanding of Interface Chemistry

Chris Moffitt; Jonathan Counsell; David Surman

doi:10.1017/S1431927614012203

The Use of Argon Cluster Ion Sources in Etching of Inorganic Materials with Reduced Chemical Damage: Toward a Better Understanding of Interface Chemistry

Published online by Cambridge University Press: 27 August 2014

Chris Moffitt ,

Jonathan Counsell and

David Surman

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Chris Moffitt: Affiliation:
Kratos Analytical, Inc., Chestnut Ridge, NY, USA
Jonathan Counsell: Affiliation:
Kratos Analytical, Ltd. Manchester, UK
David Surman: Affiliation:
Kratos Analytical, Inc., Chestnut Ridge, NY, USA

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Abstract

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Type: Abstract
Information: Microscopy and Microanalysis , Volume 20 , Supplement S3: Proceedings of Microscopy & Microanalysis 2014 , August 2014 , pp. 2094 - 2095

DOI: https://doi.org/10.1017/S1431927614012203 [Opens in a new window]

References

References:

[1] Moffitt, C Microscopy Today, March (2011) p. 16.Google Scholar

[2] Garrison, B Surface and Interface Analysis, 45 (2013) p. 35.Google Scholar

Article contents

The Use of Argon Cluster Ion Sources in Etching of Inorganic Materials with Reduced Chemical Damage: Toward a Better Understanding of Interface Chemistry

Abstract

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