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TEM Characterization of a Highly Oriented Diamond Film Deposited on (100) Silicon by Bias-Enhanced Nucleation (BEN) and Textured Growth

Published online by Cambridge University Press:  02 July 2020

A. K. Chawla
Affiliation:
Center for Advanced Materials, University of Massachusetts, Lowell, MA01854
S.-J. Jeon
Affiliation:
Center for Advanced Materials, University of Massachusetts, Lowell, MA01854
C. Sung
Affiliation:
Center for Advanced Materials, University of Massachusetts, Lowell, MA01854
Y.-J. Baik
Affiliation:
Korea Institute of Science and Technology, Seoul, SOUTH KOREA
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Extract

Currently, the aim of research in diamond film synthesis on silicon substrates is to gain an understanding of the mechanisms responsible for the development of highly oriented film and for the formation of epitaxial nuclei. With this as our goal we have applied plan-view transmission electron microscopy (TEM) for analysis of a diamond film grown on Si at various stages of film growth.

An ASTeX™ MPCVD system was used to deposit diamond on a single-crystal (100) Si substrate under the following conditions: 970°C, 700W microwave power, 2% CH4 in H2, 90 torr., and 4 hours. The growth step was preceded by a BEN stage in which a negative potential of 200V was applied to the substrate for 25 minutes at 600°C, 700W, 4% CH4 in H2, and 20 torr.. Three different types of plan-view TEM samples were prepared. For one the common procedure of backthinning, dimpling, and ion milling was applied to produce a specimen which reveals microstructures at the film surface.

Type
Recent Developments in Microscopy for Studying Electronic and Magnetic Materials
Copyright
Copyright © Microscopy Society of America 1997

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References

1.Stoner, B.R.et al., Diamond for Electronic Applications, Proc. of Mater. Res. Soc (1996)69.Google Scholar