Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-19T12:20:19.040Z Has data issue: false hasContentIssue false
  • English
  • Français

TEM And IR Reflectance Studies on Phase Transitions in Thin VOx Films.

Published online by Cambridge University Press:  02 July 2020

M.A. Verheijen  and
E.P. Boonekamp
M.A. Verheijen
Affiliation:
Philips Centre for Manufacturing Technology, Prof. Holstlaan 4, WY42, 5656AA, Eindhoven, the Netherlands.
E.P. Boonekamp
Affiliation:
Philips Research, Prof. Holstlaan 4, WA11, 5656AA, Eindhoven, the Netherlands.
Get access

Extract

Vanadium dioxide (VO2 ) exhibits a reversible semiconductor-to-metal phase transition around 341 K. The low temperature monoclinic P21 /c structure transforms into the tetragonal P42 /mnm rutile structure. The associated sharp changes in optical and electrical properties are used in various thin film switching devices. The present paper describes a study on the optical and structural changes during the synthesis of VO2 thin films using Infra-Red (IR) reflectance spectroscopy and Transmission Electron Microscopy (TEM).

The synthesis was derived from a sol-gel process by Guzman et al. Solutions of vanadyl isopropoxide (VO(OC3 H7)3 ) in n-propanol were spin-coated on a Si wafer provided with 300 nm thermal oxide. Subsequently, the wafer was transferred to an oven and heated to 773 K in a reducing H2/N2 atmosphere using a heating rate of 5 K/min. After a variable time (Δt) at 773 K, the samples were cooled down to room temperature.

Figure 1 shows the IR reflectance of thin (∽50 nm) VOx films on oxidised Si at λ,=3 μm and an angle of incidence ϕ of 30°.

Type
Thin Films/Coatings
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 842 - 843
Copyright
Copyright © Microscopy Society of America

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1]. Morin, F.G., Phys. Rev. Lett. 3 (1959) 34.CrossRefGoogle Scholar

[2]. Lewis, K.L., Pitt, A.M., Wyatt-Davies, T. and Milward, J.R., Mat. Res. Soc. Symp. Proc. 374 (1995) 105.CrossRefGoogle Scholar

[3]. Guzman, G., Morineau, R.and Livage, J., Mater. Res. Bull. 29 (1994) 509.CrossRefGoogle Scholar

[4]. Magneli, A., Acta Cryst. 6 (1953) 495.CrossRefGoogle Scholar

[5]. Tsang, C. and Manthiram, A., J. Electrochem. Soc. 144 (1997) 520.CrossRefGoogle Scholar