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TEM Analysis of Defects in AlGaN Heterostructures Grown on C-AI2O3 by Plasma Assisted Molecular Beam Epitaxy

Published online by Cambridge University Press:  23 September 2015

Sergei Rouvimov ,
V. N. Jmerik ,
D.V. Nechaev  and
S.V. Ivanov
Sergei Rouvimov
Affiliation:
Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA A. F. Ioffe Physical-Technical Institute, 194021, 26 Politekhnicheskaya str., St.-Petersburg, Russia
V. N. Jmerik
Affiliation:
A. F. Ioffe Physical-Technical Institute, 194021, 26 Politekhnicheskaya str., St.-Petersburg, Russia
D.V. Nechaev
Affiliation:
A. F. Ioffe Physical-Technical Institute, 194021, 26 Politekhnicheskaya str., St.-Petersburg, Russia
S.V. Ivanov
Affiliation:
A. F. Ioffe Physical-Technical Institute, 194021, 26 Politekhnicheskaya str., St.-Petersburg, Russia

Abstract

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Type
Abstract
Information
Microscopy and Microanalysis , Volume 21 , Supplement S3: Proceedings of Microscopy & Microanalysis 2015 , August 2015 , pp. 1803 - 1804
Copyright
Copyright © Microscopy Society of America 2015 

References

References:

[1] Ivanov, S. V., Nechaev, D. V., Sitnikova, A. A., Ratnikov, V.V., Yagovkina, M.A., Rzheutskii, N. V., Lutsenko, E. V. & Jmerik, V. N., Semicond.Sci.Technol. 29, 084008 (2014).CrossRefGoogle Scholar