A System for Simulation of Tip Evolution Under Field Evaporation

BP Geiser; DJ Larson; S Gerstl; D Reinhard; TF Kelly; TJ Prosa; D Olson

doi:10.1017/S1431927609098298

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Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Crossref Citations

This article has been cited by the following publications. This list is generated based on data provided by Crossref.

MARQUIS, E. A. GEISER, B. P. PROSA, T. J. and LARSON, D. J. 2011. Evolution of tip shape during field evaporation of complex multilayer structures. Journal of Microscopy, Vol. 241, Issue. 3, p. 225.

Torres, K.L. Geiser, B. Moody, M.P. Ringer, S.P. and Thompson, G.B. 2011. Field evaporation behavior in [0 0 1] FePt thin films. Ultramicroscopy, Vol. 111, Issue. 6, p. 512.

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Larson, David J. Geiser, Brian P. Prosa, Ty J. and Kelly, Thomas F. 2012. On the Use of Simulated Field-Evaporated Specimen Apex Shapes in Atom Probe Tomography Data Reconstruction. Microscopy and Microanalysis, Vol. 18, Issue. 5, p. 953.

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Shivaraman, Ravi Kawaguchi, Y. Tanaka, S. DenBaars, S. P. Nakamura, S. and Speck, J. S. 2013. Comparative analysis of 202¯1 and 202¯1¯ semipolar GaN light emitting diodes using atom probe tomography. Applied Physics Letters, Vol. 102, Issue. 25, p. 251104.

Devaraj, Arun Colby, Robert Vurpillot, François and Thevuthasan, Suntharampillai 2014. Understanding Atom Probe Tomography of Oxide-Supported Metal Nanoparticles by Correlation with Atomic-Resolution Electron Microscopy and Field Evaporation Simulation. The Journal of Physical Chemistry Letters, Vol. 5, Issue. 8, p. 1361.

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Kaun, Stephen W Ahmadi, Elaheh Mazumder, Baishakhi Wu, Feng Kyle, Erin C H Burke, Peter G Mishra, Umesh K and Speck, James S 2014. GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy. Semiconductor Science and Technology, Vol. 29, Issue. 4, p. 045011.

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Kaun, Stephen W Mazumder, Baishakhi Fireman, Micha N Kyle, Erin C H Mishra, Umesh K and Speck, James S 2015. Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy. Semiconductor Science and Technology, Vol. 30, Issue. 5, p. 055010.

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A System for Simulation of Tip Evolution Under Field Evaporation

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