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Strain Quantification Analysis of Epitaxial SiGe on SOI by Nanobeam Diffraction (NBD)

Published online by Cambridge University Press:  27 August 2014

J. Li ,
K. Cheng ,
A. Khakifirooz ,
J. Wang ,
A. Reznicek ,
A. Madan ,
B. Dons ,
N. Loubet ,
H. He  and
J. Gaudiello
J. Li
Affiliation:
IBM, Albany, NY 12203USA
K. Cheng
Affiliation:
IBM, Albany, NY 12203USA
A. Khakifirooz
Affiliation:
IBM, Albany, NY 12203USA
J. Wang
Affiliation:
IBM, Albany, NY 12203USA
A. Reznicek
Affiliation:
IBM, Albany, NY 12203USA
A. Madan
Affiliation:
IBM SRDC, Hopewell Junction, NY 12533USA
B. Dons
Affiliation:
IBM, Albany, NY 12203USA
N. Loubet
Affiliation:
STMicroelectronics, Albany, NY 12203USA
H. He
Affiliation:
IBM, Albany, NY 12203USA
J. Gaudiello
Affiliation:
IBM, Albany, NY 12203USA

Abstract

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Type
Abstract
Information
Microscopy and Microanalysis , Volume 20 , Supplement S3: Proceedings of Microscopy & Microanalysis 2014 , August 2014 , pp. 1070 - 1071
Copyright
Copyright © Microscopy Society of America 2014 

References

[1] Lee, M. L., et al., J. Appl. Phys. p011101 (2005.Google Scholar
[2] Ghani, T., et al., IEDM, p1161 (2003).Google Scholar
[3] Cheng, K., et al., VLSI, p128 (2011).Google Scholar
[4] Khakifirooz, A., et al., VLSI (2012).Google Scholar