Strain measurement in FinFET structures with epitaxially grown SiGe on source/drain region by nano beam diffraction (NBD) method

S.-W. Kim; D.-S. Byeon; H. Jang; D.-H. Ko

doi:10.1017/S1431927613005655

Strain measurement in FinFET structures with epitaxially grown SiGe on source/drain region by nano beam diffraction (NBD) method

Published online by Cambridge University Press: 09 October 2013

S.-W. Kim ,

D.-S. Byeon ,

H. Jang and

D.-H. Ko

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S.-W. Kim: Affiliation:
D.-S. Byeon: Affiliation:
H. Jang: Affiliation:
D.-H. Ko: Affiliation:

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Abstract

Abstract

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Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

Type: Abstract
Information: Microscopy and Microanalysis , Volume 19 , Issue S2: Proceedings of Microscopy & Microanalysis 2013 , August 2013 , pp. 732 - 733

DOI: https://doi.org/10.1017/S1431927613005655 [Opens in a new window]

Article contents

Strain measurement in FinFET structures with epitaxially grown SiGe on source/drain region by nano beam diffraction (NBD) method

Abstract

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