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Strain Engineering in Aluminum Scandium Nitride Thin Film using Four-dimensional Scanning Transmission Electron Microscopy (4D-STEM) Technique

Published online by Cambridge University Press:  30 July 2021

Pariasadat Musavigharavi ,
Andrew Meng ,
Dixiong Wang ,
Jeffery Zheng ,
Alexandre Foucher ,
Roy H. Olsson III  and
Eric Stach
Pariasadat Musavigharavi
Affiliation:
University of Pennsylvania, Philadelphia, Pennsylvania, United States
Andrew Meng
Affiliation:
University of Pennsylvania, United States
Dixiong Wang
Affiliation:
University of Pennsylvania, United States
Jeffery Zheng
Affiliation:
University of Pennsylvania, United States
Alexandre Foucher
Affiliation:
University of Pennsylvania, Philadelphia, Pennsylvania, United States
Roy H. Olsson III
Affiliation:
University of Pennsylvania, United States
Eric Stach
Affiliation:
University of Pennsylvania, Philadelphia, Pennsylvania, United States

Abstract

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Type
Diffraction Imaging Across Disciplines
Information
Microscopy and Microanalysis , Volume 27 , Supplement S1 , August 2021 , pp. 2204 - 2205
Copyright
Copyright © The Author(s), 2021. Published by Cambridge University Press on behalf of the Microscopy Society of America

References

Fichtner, S.; Wolff, N.; Lofink, F.; Kienle, L.; Wagner, B. AlScN: A III-V Semiconductor Based Ferroelectric. J. Appl. Phys. 2019, 125 (11). https://doi.org/10.1063/1.5084945.Google Scholar
Ophus, C. Four-Dimensional Scanning Transmission Electron Microscopy (4D-STEM): From Scanning Nanodiffraction to Ptychography and Beyond. Microsc. Microanal. 2019, 25 (3), 563–582. https://doi.org/10.1017/S1431927619000497.CrossRefGoogle ScholarPubMed