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Site Specific TEM Specimen Preparation for Characterization of Extended Defects in 4H-SiC Epilayers

Published online by Cambridge University Press:  27 August 2014

Mina Abadier
Affiliation:
Carnegie Mellon University, Department of Materials Science and Engineering, Pittsburgh, USA
Rachael L. Myers-Ward
Affiliation:
U.S. Naval Research Laboratory, Washington D.C., USA
Haizheng Song
Affiliation:
University of South Carolina, Department of Electrical Engineering, Columbia, USA
D. Kurt Gaskill
Affiliation:
U.S. Naval Research Laboratory, Washington D.C., USA
Chip R. Eddy Jr.
Affiliation:
U.S. Naval Research Laboratory, Washington D.C., USA
Tangali S. Sudarshan
Affiliation:
University of South Carolina, Department of Electrical Engineering, Columbia, USA
Yoosuf N. Picard
Affiliation:
Carnegie Mellon University, Department of Materials Science and Engineering, Pittsburgh, USA
Marek Skowronski
Affiliation:
Carnegie Mellon University, Department of Materials Science and Engineering, Pittsburgh, USA

Abstract

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Type
Abstract
Copyright
Copyright © Microscopy Society of America 2014 

References

[1] Nakayama, K, et al, Materials Science Forum 740-742 ( (2013), 903.Google Scholar
[2] Ha, S, et al, Journal of Applied Physics 96 (2004), 393.Google Scholar
[3] Song, H, et al, Journal of Crystal Growth 371 (2013), 94.Google Scholar