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Simulation analysis of 1250 kV HRTEM images for threading dislocations in GaN grown on sapphire

Published online by Cambridge University Press:  23 November 2012

H.S. Kim
Affiliation:
Kyung Sung University, Busan, Republic of Korea
S.H. Oh
Affiliation:
Pohang University of Science and Technology, Pohang, Republic of Korea
K. Song
Affiliation:
Pohang University of Science and Technology, Pohang, Republic of Korea
J.M. Yang
Affiliation:
National Nanofab Center, Daejeon, Republic of Korea
S.A. Song
Affiliation:
Samsung Advanced Institute of Technology, Yongin, Republic of Korea
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Abstract

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Type
Research Article
Copyright
Copyright © Microscopy Society of America 2012

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