Si+ Implantation into SiO2 Layers and Ion Beam Mixing in SiO2/Si Interfaces

H-J Fittinga; DA Zatsepin

doi:10.1017/S1431927610053687

Si+ Implantation into SiO2 Layers and Ion Beam Mixing in SiO2/Si Interfaces

Published online by Cambridge University Press: 01 August 2010

H-J Fittinga and

DA Zatsepin

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H-J Fittinga: Affiliation:
University of Rostock, Germany
DA Zatsepin: Affiliation:
Institute of Metal Physics-Russian Academy of Science, Russia

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Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Type: Abstract
Information: Microscopy and Microanalysis , Volume 16 , Supplement S2 , July 2010 , pp. 1532 - 1533

DOI: https://doi.org/10.1017/S1431927610053687 [Opens in a new window]

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Si+ Implantation into SiO2 Layers and Ion Beam Mixing in SiO2/Si Interfaces

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