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Self-Organized Sb-Based Quantum Dots Studied by Means of AFM, TEM and PL
Published online by Cambridge University Press: 02 July 2020
Extract
There is currently an increasing interest in the growth and characterisation of semiconductor quantum dots (QDs) for potential use in opto-electronic devices. Heteroepitaxy in the Stranski-Krastanow growth mode is thought to be one of the most promising routes towards the fabrication of such QDs. Little work has been done so far to extend the range of wavelength at which potential QD based opto-electronic devises might work into the middle infrared region of the electromagnetic spectrum. The aim of this paper is to expand on our previous reports on such work and to present new experimental observations concerning the formation of InSb rich QDs in GaSb and InAs matrices. Preliminary results on GaSb rich islands on GaAs are also given for comparison purposes. All samples were grown by metal-organic vapour phase epitaxy on nominal (001) GaAs and GaSb substrates at susceptor temperatures ranging from 460 to 545 °C.
- Type
- Semiconductors
- Information
- Microscopy and Microanalysis , Volume 6 , Issue S2: Proceedings: Microscopy & Microanalysis 2000, Microscopy Society of America 58th Annual Meeting, Microbeam Analysis Society 34th Annual Meeting, Microscopical Society of Canada/Societe de Microscopie de Canada 27th Annual Meeting, Philadelphia, Pennsylvania August 13-17, 2000 , August 2000 , pp. 1102 - 1103
- Copyright
- Copyright © Microscopy Society of America