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Self-Organized Sb-Based Quantum Dots Studied by Means of AFM, TEM and PL

Published online by Cambridge University Press:  02 July 2020

P. Möck
Affiliation:
now at: Department of Physics (M/C 273), University of Illinois at Chicago, 845 W. Taylor Street , Chicago, IL60607-7059
G.R. Booker
Affiliation:
Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH
E. Alphandery
Affiliation:
Department of Physics, Clarendon Laboratory, University of Oxford, Parks Road, Oxford, OX1 3PU
N.J. Mason
Affiliation:
Department of Physics, Clarendon Laboratory, University of Oxford, Parks Road, Oxford, OX1 3PU
R.J. Nicholas
Affiliation:
Department of Physics, Clarendon Laboratory, University of Oxford, Parks Road, Oxford, OX1 3PU
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Extract

There is currently an increasing interest in the growth and characterisation of semiconductor quantum dots (QDs) for potential use in opto-electronic devices. Heteroepitaxy in the Stranski-Krastanow growth mode is thought to be one of the most promising routes towards the fabrication of such QDs. Little work has been done so far to extend the range of wavelength at which potential QD based opto-electronic devises might work into the middle infrared region of the electromagnetic spectrum. The aim of this paper is to expand on our previous reports on such work and to present new experimental observations concerning the formation of InSb rich QDs in GaSb and InAs matrices. Preliminary results on GaSb rich islands on GaAs are also given for comparison purposes. All samples were grown by metal-organic vapour phase epitaxy on nominal (001) GaAs and GaSb substrates at susceptor temperatures ranging from 460 to 545 °C.

Type
Semiconductors
Copyright
Copyright © Microscopy Society of America

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References

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