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RDF Analysis of Radiation-Amorphized SiC using a field Emission Scanning Electron Microscope

Published online by Cambridge University Press:  02 July 2020

David C. Bell ,
Anthony J. Garratt-Reed  and
Linn W. Hobbs
David C. Bell
Affiliation:
Centerfor Materials Science and Engineering, Cambridge, MA, 02139
Anthony J. Garratt-Reed
Affiliation:
Centerfor Materials Science and Engineering, Cambridge, MA, 02139
Linn W. Hobbs
Affiliation:
Department of Materials Science and Engineering Massachusetts Institute of Technology, Cambridge, MA, 02139
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Abstract

Fast electrons are a particularly useful chemical and structural probe for the small sample volumes associated with ion- or fast electron-irradiation-induced amorphization, because of their much stronger interaction with matter than for X-rays or neutrons, and also because they can be readily focused to small probes. Three derivative signals are particularly rich in information: the angular distribution of scattered electrons (which is utilized in both diffraction and imaging studies); the energy loss spectrum of scattered electrons (electron energy loss spectroscopy, or EELS); and the emission spectrum of characteristic X-rays resulting from ionization energy losses (energy dispersive X-ray spectroscopy, or EDXS). We have applied the first two to the study of three amorphized compounds (AIPO4, SiO2, SiC) using MIT's Vacuum Generators HB603 field-emission (FEG) scanning transmission electron microscope (STEM), operating at 250 kV and equipped with a Gatan digital parallel-detection electron energy-loss spectrometer (digiPEELS).

Type
Nanophase and Amorphous Materials
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 700 - 701
Copyright
Copyright © Microscopy Society of America

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References

References:

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