No CrossRef data available.
Article contents
Quantitative misfit dislocation characterization with electron channeling contrast imaging
Published online by Cambridge University Press: 30 July 2021
Abstract
An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
- Type
- Defects in Materials: How We See and Understand Them
- Information
- Copyright
- Copyright © The Author(s), 2021. Published by Cambridge University Press on behalf of the Microscopy Society of America
References
Deitz, J. I., Carnevale, S. D., Ringel, S. A., McComb, D. W., and Grassman, T. J., “Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization,” J. Vis. Exp., no. 101, p. 52745, Jul. 2015, doi: 10.3791/52745.Google Scholar
Carnevale, S. D. et al. , “Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging,” Appl. Phys. Lett., vol. 104, no. 23, p. 232111, Jun. 2014, doi: 10.1063/1.4883371.CrossRefGoogle Scholar
Carnevale, S. D. et al. , “Applications of Electron Channeling Contrast Imaging for the Rapid Characterization of Extended Defects in III–V/Si Heterostructures,” IEEE J. Photovolt., vol. 5, no. 2, pp. 676–682, Mar. 2015, doi: 10.1109/JPHOTOV.2014.2379111.CrossRefGoogle Scholar
Blumer, A. N., Boyer, J. T., Deitz, J. I., Rodriguez, F. A., and Grassman, T. J., “Quantitative Characterization of Misfit Dislocations at GaP/Si Heteroepitaxial Interfaces via Electron Channeling Contrast Imaging and Semi-Automated Image Analysis,” Microsc. Microanal., vol. 25, no. S2, pp. 202–203, Aug. 2019, doi: 10.1017/S1431927619001740.Google Scholar
Fitzgerald, E. A. et al. , “Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area,” J. Appl. Phys., vol. 65, no. 6, pp. 2220–2237, Mar. 1989, doi: 10.1063/1.342834.CrossRefGoogle Scholar
Takagi, Y., Furukawa, Y., Wakahara, A., and Kan, H., “Lattice relaxation process and crystallographic tilt in GaP layers grown on misoriented Si(001) substrates by metalorganic vapor phase epitaxy,” J. Appl. Phys., vol. 107, no. 6, p. 063506, Mar. 2010, doi: 10.1063/1.3310479.Google Scholar
You have
Access