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Quantitative Electron Microprobe Analysis Of Semiconductor Materials: An Evaluation Of Accuracy

Published online by Cambridge University Press:  02 July 2020

P.K. Carpenter
P.K. Carpenter*
Affiliation:
Alliance for Microgravity Materials Science and Applications, USRA/ES75/NASA, Marshall Space Flight Center, AL35812
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Extract

Both precision and accuracy are central to quantitative microanalysis. While precision may be evaluated from x-ray counting statistics and replicate measurement, the determination of analytical accuracy requires well characterized standards of which there are few that span a wide range of compositions in binary and ternary systems. The accuracy of silicate mineral analysis has been previously studied via measurement of α factors at multiple accelerating potential and the subsequent evaluation of correction algorithms and mass absorption coefficient (mac) data sets. This approach has been extended in this study to the In2O3-Ga2O3 and HgTe-CdTe systems.

Single crystals of ln2O3, Ga2O3, and an InGa-oxide of unknown composition were used to evaluate accuracy in the In2O3-Ga2O3 binary, using the GaKα, GaLα, and InLα x-ray lines, with WDS measurements performed at 15, 20, and 25KV relative to the ln2O3 and Ga2O3 standards (see Table I). The Ga Kα line exhibits minimal absorption, has no fluorescence correction in this system and is not critically dependent on the correction algorithm or mac data set used.

Type
Quantitative X-Ray Microanalysis
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 74 - 75
Copyright
Copyright © Microscopy Society of America

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References

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