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Point Defect Clusters and Dislocations in FIB Irradiated Nanocrystalline Aluminum Films: An Electron Tomography and Aberration-Corrected High-Resolution ADF-STEM Study

Published online by Cambridge University Press:  27 October 2011

Hosni Idrissi*
Affiliation:
EMAT, Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
Stuart Turner
Affiliation:
EMAT, Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
Masatoshi Mitsuhara
Affiliation:
Department of Engineering Sciences for Electronics and Materials, Kyushu University, 6-1 Kasuga Koen, Kasuga, Fukuoka 816-8580, Japan
Binjie Wang
Affiliation:
EMAT, Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
Satoshi Hata
Affiliation:
Department of Engineering Sciences for Electronics and Materials, Kyushu University, 6-1 Kasuga Koen, Kasuga, Fukuoka 816-8580, Japan
Michael Coulombier
Affiliation:
Institute of Mechanics, Materials and Civil Engineering (iMMC), Université catholique de Louvain, B-1348 Louvain-la-Neuve, Belgium
Jean-Pierre Raskin
Affiliation:
Information and Communications Technologies, Electronics and Applied Mathematics (ICTEAM), Microwave Laboratory, Université catholique de Louvain, B-1348 Louvain-la-Neuve, Belgium
Thomas Pardoen
Affiliation:
Institute of Mechanics, Materials and Civil Engineering (iMMC), Université catholique de Louvain, B-1348 Louvain-la-Neuve, Belgium
Gustaaf Van Tendeloo
Affiliation:
EMAT, Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
Dominique Schryvers
Affiliation:
EMAT, Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
*
Corresponding author. E-mail: [email protected]
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Abstract

Focused ion beam (FIB) induced damage in nanocrystalline Al thin films has been characterized using advanced transmission electron microscopy techniques. Electron tomography was used to analyze the three-dimensional distribution of point defect clusters induced by FIB milling, as well as their interaction with preexisting dislocations generated by internal stresses in the Al films. The atomic structure of interstitial Frank loops induced by irradiation, as well as the core structure of Frank dislocations, has been resolved with aberration-corrected high-resolution annular dark-field scanning TEM. The combination of both techniques constitutes a powerful tool for the study of the intrinsic structural properties of point defect clusters as well as the interaction of these defects with preexisting or deformation dislocations in irradiated bulk or nanostructured materials.

Type
Materials Applications
Copyright
Copyright © Microscopy Society of America 2011

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References

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