Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-20T18:37:36.527Z Has data issue: false hasContentIssue false

Parametrization of The Range of Electron At Low Energy (Eo < 10 Kev) Using The Casino Monte Carlo Program

Published online by Cambridge University Press:  02 July 2020

Pierre Hovington
Affiliation:
EM Facility, University of Tennessee, Université de Sherbrooke, Québec, CANADAJ1K 2R1
Dominique Drouin
Affiliation:
EM Facility, University of Tennessee, Université de Sherbrooke, Québec, CANADAJ1K 2R1
Raynald Gauvin
Affiliation:
EM Facility, University of Tennessee, Université de Sherbrooke, Québec, CANADAJ1K 2R1
David C. Joy
Affiliation:
Department of Mechanical Engineering, Knoxville, TN37996-0810, and Oak Ridge National Laboratories, Oak Ridge, TN, 37831
Get access

Extract

The range of electrons for a given beam energy and atomic number is one of the most valuable piece of information a microscopist must know before carrying out qualitative and quantitative analysis of heterogeneous samples in a scanning electron microscope (SEM). The frequently used parametrization of Kanaya & Okayama is only « valid » at high energy (EO > 10 keV). However, with the advent of Field Emission Gun SEM (FEGSEM) most of the effort has been toward low energy analysis where no parametrization is available yet. In this paper, the parametrization of the range of electrons at low energy as a function of atomic number and beam energy will be presented for both the backscattered and the internal electrons.

The distribution of the maximum depth reached by 250 k electrons generated by the CASINO Monte Carlo program2 was used to compute the range for 10 elements at 20 energies.

Type
Quantitative Biological and Materials Microanalysis by Electrons and X-Rays
Copyright
Copyright © Microscopy Society of America 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Kanaya, K., and Okayama, S., (1972), J. Phys. D : Appl. Phys., 5, pp. 4358.10.1088/0022-3727/5/1/308CrossRefGoogle Scholar
Hovington, P.et al., (1997), Scanning Vol. 19, pp. 11410.1002/sca.4950190101CrossRefGoogle Scholar
Drouin, D.et al., Scanning Vol. 19, pp. 2028.10.1002/sca.4950190103CrossRefGoogle Scholar
Hovington, P.et al., (1997), Scanning Vol. 19, pp. 293510.1002/sca.4950190104CrossRefGoogle Scholar
Al-Ahmad, K.O., and Watt, D.E., (1983), J.Phys.D : Appl. Phys., 16, pp 2257–6710.1088/0022-3727/16/11/028CrossRefGoogle Scholar
Kanter, H., and Sternglass, E.J., (1959), J. Appl. Phys., Vol. 30, p. 1428Google Scholar
Cosslett, V.E., and Thomas, R.N., (1964), Britt. J. Appl. Phys. Vol. 15., pp. 12831300.10.1088/0508-3443/15/11/305CrossRefGoogle Scholar
Young, J.R., (1956), J. Appl. Phys., 27, p. 110.1063/1.1722186CrossRefGoogle Scholar
Holliday, J.E., and Sternglass, E.J., (1959), J. Appl. Phys., 30, p. 1428.10.1063/1.1735348CrossRefGoogle Scholar
Kanter, H., and Sternglass, E.J., (1959), J. Appl. Phys., Vol. 30, p. 1428.Google Scholar