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The Origin Of Electrical Activity At Grain Boundaries In Perovskites
Published online by Cambridge University Press: 02 July 2020
Extract
The electrical activity of grain boundaries in perovskites, of which SrTiO3 is a model system, is the basis for their use as capacitors, varistors and positive-temperature coefficient resistors. In related materials this same electrical activity is often detrimental. The outstanding example of a negative effect is the reduction in critical current by several orders of magnitude across grain boundaries in YBa2CU3O7-δ as the boundary misorientation is increased from 0°-45°. Grain boundaries are also likely to profoundly affect properties such as domain wall motion in ferroelectric and magnetic perovskites. The origin of the electrical activity is ubiquitously attributed to the existence of grain boundary donors, usually assumed to be impurities, which set up a double Schottky barrier as they are screened by dopants in the adjacent bulk crystal. We show here, that although electrical barriers can doubtless be modified by dopants, the grain boundary structure itself is the intrinsic origin of the socalled grain boundary donors.
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- Atomic Structure And Microchemistry Of Interfaces
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- Copyright © Microscopy Society of America