Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-23T15:43:35.590Z Has data issue: false hasContentIssue false
  • English
  • Français

Observing a p-n Junction in a Reverse-Biased GaP Light-Emitting Diode by Combining Electron Holography and Focused-Ion-Beam Milling

Published online by Cambridge University Press:  21 July 2003

Z. Wang ,
K. Sasaki ,
T. Hirayama ,
Y. Yabuuchi  and
H. Saka
Z. Wang
Affiliation:
Japan Fine Ceramics Center (JFCC), Nagoya, 456-8587 Japan
K. Sasaki
Affiliation:
Department of Quantum Engineering, Nagoya University, Nagoya, 464-8603 Japan
T. Hirayama
Affiliation:
Japan Fine Ceramics Center (JFCC), Nagoya, 456-8587 Japan
Y. Yabuuchi
Affiliation:
Matsushita Techno-research, Inc., Osaka, 570-8501 Japan
H. Saka
Affiliation:
Department of Quantum Engineering, Nagoya University, Nagoya, 464-8603 Japan

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Information
Microscopy and Microanalysis , Volume 9 , Issue S02 , August 2003 , pp. 772 - 773
Copyright
Copyright © Microscopy Society of America 2003