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A Novel Method for Contactless, Non Destructive Investigation of Semi Conductor Structures in the SEM.

Published online by Cambridge University Press:  02 July 2020

EI Rau  and
VNE Robinson
EI Rau
Affiliation:
Department of Physics, Moscow State University, Moscow, Russia
VNE Robinson
Affiliation:
ETP Semra Pty Ltd, 244 Canterbury Road, Canterbury, NSW, 2193, Australia
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Extract

It is known that scanning a focussed laser beam across the surface of a semi conductor wafer, can produce a photon induced voltage (PIV) at electrically active sites. This technique depends upon the incident photons inducing charge carriers, both electrons and holes, on or just below the surface of the semi conductor. These charge carriers drift through the device until they are captured by a defect, at which stage they accumulate, producing a voltage at the surface. These voltages are only associated with a charge carrier capture site, which means that a voltage build up only occurs at a defect. This PIV technique has been used for contactless imaging of semiconductor wafers, allowing easy identification of electrically active sites such as crystallographic defects, imperfections and inhomogenieties on or just below the surface [1,2].

Nothing in the above mechanism excludes the use of an electron beam to induce charge carriers and produce an electron induced voltage (EIV).

Type
Recent Developments in Microscopy for Studying Electronic and Magnetic Materials
Information
Microscopy and Microanalysis , Volume 3 , Issue S2: Proceedings: Microscopy & Microanalysis '97, Microscopy Society of America 55th Annual Meeting, Microbeam Analysis Society 31st Annual Meeting, Histochemical Society 48th Annual Meeting, Cleveland, Ohio, August 10-14, 1997 , August 1997 , pp. 495 - 496
Copyright
Copyright © Microscopy Society of America 1997

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References

1.Munakata, C. and Matsubara, S.. J. Phys. D: Appl. Phys., 16, 1983, 109310.1088/0022-3727/16/6/017CrossRefGoogle Scholar
2.Guidotti, D.in “Review of progress in quantitative non destructive evaluation”, Ed. Thompson, D.O.and Chimenti, D.E.(Plenum press, NY), 7B, 1988, 1167Google Scholar
3.Aristov, V.V., Kononchuk, O.V., Rau, E.I. and Yakimov, E.B., Microelectronics Engineering 1990, No. 12, 17910.1016/0167-9317(90)90031-NCrossRefGoogle Scholar