New FESEM Design for 1nm at 1kV Imaging, EDS and BSE Nanoanalysis, and a Discussion of Diffraction Limits, Depth of Field and the Future

E D Boyes

doi:10.1017/S1431927602101930

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New FESEM Design for 1nm at 1kV Imaging, EDS and BSE Nanoanalysis, and a Discussion of Diffraction Limits, Depth of Field and the Future

Published online by Cambridge University Press: 01 November 2002

E D Boyes

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E D Boyes*: Affiliation:
DuPont Company, CR&D, PO Box 80356-383, Wilmington, DE 19880-0356, USA

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Type: Abstract
Information: Microscopy and Microanalysis , Volume 8 , Issue S02 , August 2002 , pp. 122 - 123

DOI: https://doi.org/10.1017/S1431927602101930 [Opens in a new window]
Copyright: Copyright © Microscopy Society of America 2002

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New FESEM Design for 1nm at 1kV Imaging, EDS and BSE Nanoanalysis, and a Discussion of Diffraction Limits, Depth of Field and the Future

Volume 8, Issue S02
E D Boyes ^(a1)
DOI: https://doi.org/10.1017/S1431927602101930

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New FESEM Design for 1nm at 1kV Imaging, EDS and BSE Nanoanalysis, and a Discussion of Diffraction Limits, Depth of Field and the Future

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