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NanoFab with SIMS - Recent Results from the BAM-L200 Analytical Standard and Semiconductor Samples

Published online by Cambridge University Press:  01 August 2018

Brett Lewis ,
Fouzia Khanom  and
John Notte
Brett Lewis
Affiliation:
Carl Zeiss Microscopy, One Corporation Way, Peabody, MA 01960, USA
Fouzia Khanom
Affiliation:
Carl Zeiss Microscopy, One Corporation Way, Peabody, MA 01960, USA
John Notte
Affiliation:
Carl Zeiss Microscopy, One Corporation Way, Peabody, MA 01960, USA

Abstract

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Type
Abstract
Information
Microscopy and Microanalysis , Volume 24 , Supplement S1: Proceedings of Microscopy & Microanalysis 2018 , August 2018 , pp. 850 - 851
Copyright
© Microscopy Society of America 2018 

References

[1] Hlawacek, G. Gölzhäuser, A. Helium Ion Microscopy. Springer 2017.Google Scholar
[2] Wirtz, T., Dowsett, D. Philipp, P. Helium Ion Microscopy (edited by G. Hlawacek and A. Gölzhäuser Springer 2017.Google Scholar
[3] Wirtz, T., Philipp, P., Audinot, J.-N., Dowsett, D. Eswara, S. Nanotechnology 26 2015 434001.Google Scholar
[4] Bundesanstalt für Materialforschung und -prüfung (BAM) https://rrr.bam.de/RRR/Content/EN/Downloads/RM-certificates/RM-cert-layer-and-surface/bam_l200.html.Google Scholar