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Microstructure of Porous Silicon Thin Films

Published online by Cambridge University Press:  02 July 2020

Y. Berta  and
R. A. Gerhardt
Y. Berta
Affiliation:
The School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA30332-0245
R. A. Gerhardt
Affiliation:
The School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA30332-0245
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Extract

Porous silicon has potential applications in the microelectronics industry. It has been investigated as an electroluminescent source1, as a sensing device in chemical sensors and as an antireflective coating for solar cells. The low efficiency of the solar cells is enhanced by the antireflective coating that porous silicon provides, while the cost of fabrication of the cells is decreased. Porous silicon is normally processed by electrochemical anodization of silicon wafers. Since parameters such as current density, anodization time, and surface conditions can affect the microstructure of the films obtained, we varied the current density to study the effect of the microstructure on the resultant reflectance for the purpose of improving it. It has been found that higher current densities result in higher reflectance films than the lower current densities.

Type
Microscopy of Semiconducting and Superconducting Materials
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 632 - 633
Copyright
Copyright © Microscopy Society of America

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References

1. Hirschman, K. D., Tsybeskov, L., Duttagupta, S.P. and Fauchet, P.M., Nature, 384 (1996) 338.CrossRefGoogle Scholar

2. Yamana, M., Kashiwazaki, N., Kinoshita, A., Nakano, T., Yamamoto, M. and Walton, C.W., J. Electrochem. Soc. 137[9] (1990) 2925.CrossRefGoogle Scholar

3. Prasad, A., Balakrishnam, S., Jain, S.K., and Jain, J.C., J. of Electrochem. Soc. 129 (1982) 596.CrossRefGoogle Scholar

4. Coles, A.X., Gerhardt, R.A. and Rohatgi, A.Mat.Res.Symp.Proc. 426 (1996) 557.CrossRefGoogle Scholar

5. Coles, A.X., Berta, Y. and Gerhardt, R. A., to be published.Google Scholar

6. Cullis, A.G. and Canham, L.T., Nature 353 (1991) 335.CrossRefGoogle Scholar

7. Cole, M.W., et al, Proc. 50th Ann. Meeting of the E.M.S.A., Bailey, G.W., Bentley, J., and Small, J. A. (Eds.) (1992) 1398.Google Scholar

8. This work was funded in part by NSF under grant DMR-9500282.Google Scholar