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Microstructure of Cr-B Ohmic and Rectifying Contacts on (0001) 6H Sic

Published online by Cambridge University Press:  02 July 2020

R.-J. Liu ,
L. M. Porter ,
M. J. Kim ,
R. W. Carpenter  and
R. F. Davis
R.-J. Liu
Affiliation:
Science and Engineering of Materials Program and Center for Solid State Science, Arizona State University, Tempe, AZ85287-1704
L. M. Porter
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC27695-7907
M. J. Kim
Affiliation:
Science and Engineering of Materials Program and Center for Solid State Science, Arizona State University, Tempe, AZ85287-1704
R. W. Carpenter
Affiliation:
Science and Engineering of Materials Program and Center for Solid State Science, Arizona State University, Tempe, AZ85287-1704
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC27695-7907
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Extract

6H-SiC is a wide band-gap semiconductor. In recent years, a variety of high-power, -temperature, -speed and opto-electronic devices have been produced in 6H-SiC films. The future development of SiC device technology depends on the ability to form good ohmic and Schottky contacts. Plots of the current-voltage (I-V) characteristics of Cr-B contacts on (0001) 6H-SiC revealed that they became the most ohmic-like after annealing at 1000 °C for 240 sec. and rectifying after annealing for 300 sec, therefore TEM analysis of the microstructures of as-deposited and annealed Cr-B films should help in understanding what causes both the ohmic-like and rectifying behaviors.

In this research, CrxBy film was deposited on vicinal (0001) 6H-SiC substrates by electron beam evaporation at room temperature. The intended phase was CrB2. Fig.l shows the microstructure of the as-deposited specimen. 6H-SiC appears to be a perfect crystal, but the Cr-B film had columnar polycrystalline microstructure.

Type
Atomic Structure and Mechanisms at Interfaces in Materials
Information
Microscopy and Microanalysis , Volume 3 , Issue S2: Proceedings: Microscopy & Microanalysis '97, Microscopy Society of America 55th Annual Meeting, Microbeam Analysis Society 31st Annual Meeting, Histochemical Society 48th Annual Meeting, Cleveland, Ohio, August 10-14, 1997 , August 1997 , pp. 641 - 642
Copyright
Copyright © Microscopy Society of America 1997

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References

Davis, R. F., The Physics and Chemistry of Carbides, Nitrides and Borides, (1990) 589.10.1007/978-94-009-2101-6_34Google Scholar
Porter, L. M.et al., Mat. Res. Sou. Symp. Proc. Vol. 282 (1993) 471.10.1557/PROC-282-471CrossRefGoogle Scholar
This research was supported by the Materials Sciences Division (Dr. Otto Buck) under grant DE-FG03-94ER45510.Google Scholar